| PART |
Description |
Maker |
| DB300S DB300R DB300A SIDAC DB120A DB120R DB120S DB |
Bilateral Voltage triggered Switch
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c
|
Jinan Jingheng (Group) ...
Jinan Jing Heng Electro...
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STE26NA90 6245 -STE26NA90 |
N-Channel 900V-0.25惟-26A-ISOTOP Fast Power MOSFET(N娌??蹇?????MOSFET)
From old datasheet system
N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET
N - CHANNEL 900V - 0.25 Ohm - 26A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STH6NA80FI 2998 STW6NA80 |
N-CHANNEL MOSFET
N - CHANNEL 800V - 1.8 - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BUZ80A 2955 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
N - CHANNEL 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管（不适用沟道增强模式快速功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| AP6906GH-HF AP6906GH-HF-14 |
16.4 A, 60 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5
Simple Drive Requirement, Fast Switching Performance
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| SF30AG-T SF30AG-B SF30DG-B SF30DG-T SF30JG-B SF30A |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
|
DIODES[Diodes Incorporated]
|
| SF20AG-T SF20JG-T SF20AG SF20AG_1 SF20BG-T SF20CG- |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
2.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
|
DIODES[Diodes Incorporated]
|
| STGY40NC60VD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
N-channel 600V - 50A - Max247 Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
| ISL54060IRUZ-T ISL54060IRTZ-T ISL54061 ISL54061IRT |
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Swit
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-TDFN DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO10
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Switch
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-uTQFN T&R DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PQCC10
|
Intersil Corporation
Intersil, Corp.
|
| STH9NA80 STH9NA80FI STW9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
